Physics Of Semiconductor Devices Sze Pdf Free ((FREE)) Download
Physics Of Semiconductor Devices Sze Pdf Free Download
dr. baliga received the b.s. in 1960 and the sc.d. in 1964. in 1965, he joined the faculty of the university of california at berkeley, where he remains a professor. he is a founder of the ieee semiconductor industry association, a fellow of the american physical society, and an ieee fellow. he has published more than 700 research papers and holds more than 35 u. patents. he was named one of the top 100 engineers of the 20th century in engineering and technology by the american society of mechanical engineers. dr. baliga is the recipient of numerous awards for his excellence in teaching, research, and mentoring, including the ieee leonidas j. emme award (2003), the university of california regents distinguished teaching award (2000), the university of california regents outstanding teaching award (2001), the young investigator award of the american institute of physics (1997), and the national medal of technology and innovation (2011).
from 1974 to 1988, dr. baliga performed research and directed a group of 40 scientists at the general electric research and development center in schenectady, ny, in the area of power semiconductor devices and high voltage integrated circuits. during this time, he pioneered the concept of combining mos and bipolar physics to create a new family of discrete devices. he is the inventor of the igbt which is now in production by many international semiconductor companies. for his work, scientific american magazine named him one of the eight heroes of the semiconductor revolution in their 1997 special issue commemorating the solid-state century. dr. baliga is also the originator of the concept of merging schottky and p-n junction physics to create a new family of jbs power rectifiers that are commercially available from various companies.
divided into five parts, the text first providesa summary of semiconductor properties, covering energy band, carrier concentration, and transport properties.the second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (mis) capacitors. part iii examinesbipolar transistors, mosfets(mos field-effect transistors), and other field-effect transistors such as jfets(junction field-effect-transistors) and mesfets(metal-semiconductor field-effect transistors).part ivfocuses on negative-resistance and power devices. the bookconcludes with coverage of photonic devices and sensors,including light-emitting diodes (leds),solar cells, and various photodetectors and semiconductor sensors.this classic volume, thestandard textbook and reference in the field of semiconductor devices:
divided into five parts, the text first providesa summary of semiconductor properties, covering energy band, carrier concentration, and transport properties.the second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (mis) capacitors. part iii examinesbipolar transistors, mosfets(mos field-effect transistors), and other field-effect transistors such as jfets(junction field-effect-transistors) and mesfets(metal-semiconductor field-effect transistors).
bipolar technology is a mature technology that has been in common use in electronic applications for more than half a century. the recent boom in the adoption of sic and gan-based devices has renewed interest in bipolar technology, especially for power and high-frequency applications. however, it is widely believed that bipolar technology is at an end of its time as the present generation of devices are approaching their physical limits in terms of power density and lifetime. this book examines the performance limits for a number of key applications of bipolar devices, and the potential to meet these limits.
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